DATA SHEETProduct specificationSupersedes data of 2001 Oct 292001 Nov 02 DISCRETE SEMICONDUCTORS BGD712750 MHz, 18.5 dB gain power doubler amplifierdb
2001 Nov 02 2 NXP Semiconductors Product specification750 MHz, 18.5 dB gain power doubler amplifierBGD712FEATURES Excellent linearity Extremely low
2001 Nov 02 3 NXP Semiconductors Product specification750 MHz, 18.5 dB gain power doubler amplifierBGD712CHARACTERISTICSBandwidth 40 to 750 MHz; VB=2
2001 Nov 02 4 NXP Semiconductors Product specification750 MHz, 18.5 dB gain power doubler amplifierBGD712Notes1. Slope straight line is defined as ga
2001 Nov 02 5 NXP Semiconductors Product specification750 MHz, 18.5 dB gain power doubler amplifierBGD712handbook, halfpage2000 400 800600MCD842f (MH
2001 Nov 02 6 NXP Semiconductors Product specification750 MHz, 18.5 dB gain power doubler amplifierBGD712PACKAGE OUTLINEUNITA2max.cee1qQmax.q1q2U2U1W
2001 Nov 02 7 NXP Semiconductors Product specification750 MHz, 18.5 dB gain power doubler amplifierBGD712DATA SHEET STATUSNotes1. Please consult the
2001 Nov 02 8 NXP Semiconductors Product specification750 MHz, 18.5 dB gain power doubler amplifierBGD712Limiting values Stress above one or more l
NXP Semiconductorsprovides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interf
Comments to this Manuals