DATA SHEETProduct specificationSupersedes data of 2000 Mar 282001 Nov 01 DISCRETE SEMICONDUCTORS BGD906; BGD906MI860 MHz, 21.5 dB gain power doubler a
2001 Nov 01 10 NXP Semiconductors Product specification860 MHz, 21.5 dB gain power doubler amplifierBGD906; BGD906MILimiting values ⎯ Stress above on
NXP Semiconductorsprovides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interf
2001 Nov 01 2 NXP Semiconductors Product specification860 MHz, 21.5 dB gain power doubler amplifierBGD906; BGD906MIFEATURES• Excellent linearity• Ext
2001 Nov 01 3 NXP Semiconductors Product specification860 MHz, 21.5 dB gain power doubler amplifierBGD906; BGD906MICHARACTERISTICSBandwidth 40 to 900
2001 Nov 01 4 NXP Semiconductors Product specification860 MHz, 21.5 dB gain power doubler amplifierBGD906; BGD906MICSO composite second order distort
2001 Nov 01 5 NXP Semiconductors Product specification860 MHz, 21.5 dB gain power doubler amplifierBGD906; BGD906MIhandbook, halfpage0Vo(dBmV)f (MHz)
2001 Nov 01 6 NXP Semiconductors Product specification860 MHz, 21.5 dB gain power doubler amplifierBGD906; BGD906MIhandbook, halfpage0Vo(dBmV)f (MHz)
2001 Nov 01 7 NXP Semiconductors Product specification860 MHz, 21.5 dB gain power doubler amplifierBGD906; BGD906MIhandbook, halfpage40Vo (dBmV)CTB(d
2001 Nov 01 8 NXP Semiconductors Product specification860 MHz, 21.5 dB gain power doubler amplifierBGD906; BGD906MIPACKAGE OUTLINEUNITA2max.cee1qQmax
2001 Nov 01 9 NXP Semiconductors Product specification860 MHz, 21.5 dB gain power doubler amplifierBGD906; BGD906MIDATA SHEET STATUSNotes1. Please co
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