DATA SHEETProduct specificationSupersedes data of 2001 Oct 252001 Nov 02 DISCRETE SEMICONDUCTORS BGD885860 MHz, 17 dB gain power doubler amplifierdboo
2001 Nov 02 2 NXP Semiconductors Product specification860 MHz, 17 dB gain power doubler amplifierBGD885FEATURES Excellent linearity Extremely low n
2001 Nov 02 3 NXP Semiconductors Product specification860 MHz, 17 dB gain power doubler amplifierBGD885CHARACTERISTICSTable 1 Bandwidth 40 to 860 MHz
2001 Nov 02 4 NXP Semiconductors Product specification860 MHz, 17 dB gain power doubler amplifierBGD885Fig.2 Test circuit.123456789BGD885inputC2outp
2001 Nov 02 5 NXP Semiconductors Product specification860 MHz, 17 dB gain power doubler amplifierBGD885PACKAGE OUTLINE REFERENCESOUTLINEVERSIONEUROPE
2001 Nov 02 6 NXP Semiconductors Product specification860 MHz, 17 dB gain power doubler amplifierBGD885DATA SHEET STATUSNotes1. Please consult the mo
2001 Nov 02 7 NXP Semiconductors Product specification860 MHz, 17 dB gain power doubler amplifierBGD885NXP Semiconductors does not accept any liabili
NXP Semiconductorsprovides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interf
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