Philips BGA2712 User Manual Page 2

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2002 Sep 10 2
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2712
FEATURES
Internally matched to 50
Wide frequency range (3.2 GHz at 3 dB bandwidth)
Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
5 dBm saturated output power at 1 GHz
Good linearity (11 dBm IP3
(out)
at 1 GHz)
Unconditionally stable (K > 1.5).
APPLICATIONS
LNB IF amplifiers
Cable systems
ISM
General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN DESCRIPTION
1V
S
2, 5 GND2
3RFout
4GND1
6RFin
MAM455
132
4
1
63
2, 54
56
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: E2-.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
DC supply voltage 5 6 V
I
S
DC supply current 12.3 mA
s
21
2
insertion power gain f = 1 GHz 21.3 dB
NF noise figure f = 1 GHz 3.9 dB
P
L(sat)
saturated load power f = 1 GHz 4.8 dBm
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
DC supply voltage RF input AC coupled 6V
I
S
supply current 35 mA
P
tot
total power dissipation T
s
90 C 200 mW
T
stg
storage temperature 65 +150 C
T
j
operating junction temperature 150 C
P
D
maximum drive power 10 dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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